Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme ConditionsThis book discusses the latest investigations into the electronic structure of narrow gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure induced transition from semiconductor to semimetal in
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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions